Category:
Power MOSFET
Dimensions:
3 x 1.7 x 1mm
Maximum Continuous Drain Current:
340 mA, 510 mA
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
1.1 nC @ 10 V, 1.6 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
20 pF@ 25 V, 66 pF@ -25 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
8 ns, 14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.96 W
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
2.8 (N) ns, 3.2 (P) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4 Ω, 10 Ω
