Diodes Inc DMN3018SSS-13 N-channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC

DMN3018SSS-13 Diodes Inc  N-channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC
DMN3018SSS-13
DiodesZetex

Product Information

Category:
Power MOSFET
Dimensions:
4.95 x 3.95 x 1.5mm
Maximum Continuous Drain Current:
7.3 A
Transistor Material:
Si
Width:
3.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
697 pF @ 15 V
Length:
4.95mm
Pin Count:
8
Typical Turn-Off Delay Time:
20.1 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
±25 V
Height:
1.5mm
Typical Turn-On Delay Time:
4.3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 7.3 A 30 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is DMN3018SSS-13. It is of power mosfet category . The given dimensions of the product include 4.95 x 3.95 x 1.5mm. While 7.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.95mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of soic. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 13.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 697 pf @ 15 v . Its accurate length is 4.95mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 20.1 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.7 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. In addition, the height is 1.5mm. In addition, it has a typical 4.3 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 35 mω maximum drain source resistance.

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DMN3018SSS, 30V N-Channel Enhancement Mode MOSFET(Technical Reference)

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