Diodes Inc DMN3052L-7 N-channel MOSFET, 5.4 A, 30 V, 3-Pin SOT-23

DMN3052L-7 Diodes Inc  N-channel MOSFET, 5.4 A, 30 V, 3-Pin SOT-23
DMN3052L-7
DiodesZetex

Product Information

Category:
Power MOSFET
Dimensions:
3 x 1.4 x 1.1mm
Maximum Continuous Drain Current:
5.4 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
100 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.3 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
555 pF @ 15 V
Length:
3mm
Pin Count:
3
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
±12 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is Diodes Inc N-channel MOSFET 5.4 A 30 V 3-Pin SOT-23 manufactured by DiodesZetex. The manufacturer part number is DMN3052L-7. It is of power mosfet category . The given dimensions of the product include 3 x 1.4 x 1.1mm. While 5.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. It provides up to 100 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 555 pf @ 15 v . Its accurate length is 3mm. It contains 3 pins. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.4 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1.1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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N-Channel Enhancement Mode Field Effect Transistor(Technical Reference)

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