Category:
Power MOSFET
Dimensions:
3.1 x 1.7 x 1.3mm
Maximum Continuous Drain Current:
1 A, 1.34 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
SOT-26
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
59.76 pF@ -16 V, 60.67 pF@ 16 V
Length:
3.1mm
Pin Count:
6
Typical Turn-Off Delay Time:
26.7 ns, 28.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.12 W
Maximum Gate Source Voltage:
-6 V, +6 V
Height:
1.3mm
Typical Turn-On Delay Time:
5.1 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.3 Ω, 700 mΩ
