Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Forward Transconductance:
19S
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.56 W
Maximum Gate Source Voltage:
±20 V
Height:
1.55mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
90 mΩ
