Dimensions:
10.3 x 4.7 x 16mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.15V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
117 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6810 pF @ 12 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
111 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
211 W
Maximum Gate Source Voltage:
±20 V
Height:
16mm
Typical Turn-On Delay Time:
63 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.8 mΩ
