Category:
Power MOSFET
Dimensions:
8.64 x 10.26 x 4.4mm
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
10.26mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF@ 25 V
Length:
8.64mm
Pin Count:
3
Typical Turn-Off Delay Time:
44 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±20 V
Height:
4.4mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
380 mΩ
