Dimensions:
15.87 x 4.82 x 20.82mm
Maximum Continuous Drain Current:
47 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
190 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5900 pF @ 25 V
Length:
15.87mm
Pin Count:
3
Typical Turn-Off Delay Time:
540 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
417 W
Series:
SuperFET
Maximum Gate Source Voltage:
±30 V
Height:
20.82mm
Typical Turn-On Delay Time:
110 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
223 mΩ
