GT40RR21 Toshiba IGBT, 40 A 1350 V, 3-Pin TO-3P

GT40RR21  Toshiba IGBT, 40 A 1350 V, 3-Pin TO-3P
Toshiba

Product Information

Dimensions:
15.5 x 4.5 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Maximum Continuous Collector Current:
40 A
Maximum Collector Emitter Voltage:
1350 V
Height:
20mm
Width:
4.5mm
Length:
15.5mm
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-3P
Switching Speed:
1MHz
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 40 A 1350 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is GT40RR21. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. The product has a maximum 40 a continuous collector current . Whereas features a 1350 v of collector emitter voltage (max). In addition, the height is 20mm. Furthermore, the product is 4.5mm wide. Its accurate length is 15.5mm. It offers a maximum ±25v gate emitter voltage . The package is a sort of to-3p. It has about 1mhz switching speed . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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GT40RR21, Silicon N-Channel IGBT Data Sheet(Technical Reference)

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FAQs

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