Category:
Power MOSFET
Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
13.5 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
86 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
8237 pF @ -10 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
300 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±8 V
Height:
1.575mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13 mΩ
