Category:
Power MOSFET
Dimensions:
3.05 x 1.65 x 1mm
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Width:
1.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
170 mΩ
Package Type:
TSOP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.5 nC @ 10 V
Channel Type:
N
Length:
3.05mm
Pin Count:
6
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.14 W
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
