Category:
Power MOSFET
Dimensions:
10.51 x 4.65 x 15.49mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Drain Source Resistance:
180 mΩ
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
57 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1920 pF @ 100 V
Length:
10.51mm
Pin Count:
3
Typical Turn-Off Delay Time:
59 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
227 W
Series:
E Series
Maximum Gate Source Voltage:
±20 V
Height:
15.49mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
