Category:
Power MOSFET
Dimensions:
6.29 x 5 x 3.37mm
Maximum Continuous Drain Current:
370 mA
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
HVMDIP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
360 pF @ 25 V
Length:
6.29mm
Pin Count:
4
Forward Transconductance:
1.5S
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
±20 V
Height:
3.37mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
3 Ω
