Dimensions:
10.36 x 4.9 x 16.07mm
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
885 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
35 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
16.07mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ
