Category:
Power MOSFET
Dimensions:
2.92 x 1.4 x 0.94mm
Maximum Continuous Drain Current:
900 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
135 pF @ 15 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Maximum Gate Source Voltage:
±20 V
Height:
0.94mm
Typical Turn-On Delay Time:
5 ns, 8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
300 mΩ
