Category:
Power MOSFET
Dimensions:
6.35 x 5.35 x 1.1mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.9V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
61 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
4530 pF @ -15 V
Length:
6.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
66 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
±25 V
Height:
1.1mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.6 mΩ
