Category:
Power MOSFET
Dimensions:
3.3 x 3.3 x 1mm
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.3 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1050 pF@ 25 V
Length:
3.3mm
Pin Count:
8
Typical Turn-Off Delay Time:
6.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
6.9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
12.6 mΩ
