Vishay SQJ962EP-T1-GE3 Dual N-channel MOSFET Transistor, 8 A, 60 V, 8-Pin PowerPAK SO

SQJ962EP-T1-GE3 Vishay  Dual N-channel MOSFET Transistor, 8 A, 60 V, 8-Pin PowerPAK SO
Vishay

Product Information

Dimensions:
5 x 4.47 x 1.14mm
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Width:
4.47mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Drain Source Resistance:
127 mΩ
Package Type:
PowerPAK SO
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
805 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
379 pF @ 25 V
Length:
5.25mm
Pin Count:
8
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
±20 V
Height:
1.14mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
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This is Dual N-channel MOSFET Transistor 8 A 60 V 8-Pin PowerPAK SO manufactured by Vishay. The manufacturer part number is SQJ962EP-T1-GE3. The given dimensions of the product include 5 x 4.47 x 1.14mm. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.47mm wide. The product offers isolated transistor configuration. It has a maximum of 60 v drain source voltage. It provides up to 127 mω maximum drain source resistance. The package is a sort of powerpak so. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 805 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 379 pf @ 25 v . Its accurate length is 5.25mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 16 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 25 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.14mm. In addition, it has a typical 5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

pdf icon
SQJ962EP, Automotive Dual N-Channel 60V (Drain-Source) 175degC MOSFET Data Sheet(Technical Reference)

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