Category:
Power MOSFET
Dimensions:
10.312 x 9.45 x 4.572mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2000 pF @ 100 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
192 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
±30 V
Height:
4.572mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
165 mΩ
