Category:
Power MOSFET
Dimensions:
6.5 x 3.56 x 1.6mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
3.56mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
601 pF@ 30 V
Length:
6.5mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
±20 V
Height:
1.6mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
300 mΩ
