Dimensions:
6.1 x 5.1 x 1.1mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.7V
Maximum Drain Source Resistance:
4.4 mΩ
Package Type:
PowerDFN56
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
41.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2521 pF @ 15 V
Length:
6.1mm
Pin Count:
8
Forward Transconductance:
46S
Typical Turn-Off Delay Time:
42.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
73.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Typical Turn-On Delay Time:
12.6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
