Infineon BSR802N L6327 N-channel MOSFET, 3.7 A, 20 V OptiMOS 2, 3-Pin SC-59

BSR802N-L6327 Infineon BSR802N L6327 N-channel MOSFET, 3.7 A, 20 V OptiMOS 2, 3-Pin SC-59
BSR802N L6327
Infineon

Product Information

Category:
Small Signal
Dimensions:
3 x 1.1 x 1.6mm
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
1.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.75V
Package Type:
SC-59
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.7 nC @ 2.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1013 pF @ 10 V
Length:
3mm
Pin Count:
3
Forward Transconductance:
16S
Typical Turn-Off Delay Time:
26 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
±8 V
Height:
1.6mm
Typical Turn-On Delay Time:
9.8 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
32 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 3.7 A 20 V OptiMOS 2 3-Pin SC-59 manufactured by Infineon. The manufacturer part number is BSR802N L6327. It is of small signal category . The given dimensions of the product include 3 x 1.1 x 1.6mm. While 3.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.1mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.75v of maximum gate threshold voltage. The package is a sort of sc-59. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.7 nc @ 2.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1013 pf @ 10 v . Its accurate length is 3mm. It contains 3 pins. The forward transconductance is 16s . Whereas, its typical turn-off delay time is about 26 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.5 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of ±8 v. In addition, the height is 1.6mm. In addition, it has a typical 9.8 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 32 mω maximum drain source resistance.

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BSR802N, OptiMOS 2 Small-Signal-Transistor(Technical Reference)

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