Vishay Siliconix VB20100S-E3/8W SMT Schottky Diode, 100V 20A, 3-Pin TO-263AB

VB20100S-E3-8W Vishay Siliconix VB20100S-E3/8W SMT Schottky Diode, 100V 20A, 3-Pin TO-263AB
VB20100S-E3/8W
Vishay Siliconix

Product Information

Dimensions:
10.45 x 9.14 x 4.83mm
Mounting Type:
Surface Mount
Maximum Continuous Forward Current:
20A
Maximum Operating Temperature:
+150 °C
Peak Non-Repetitive Forward Surge Current:
250A
Maximum Forward Voltage Drop:
900mV
Height:
4.83mm
Peak Reverse Current:
30mA
Width:
9.14mm
Length:
10.45mm
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-40 °C
Diode Type:
Schottky
Diode Configuration:
Single
Pin Count:
3
Peak Reverse Repetitive Voltage:
100V
RoHs Compliant
Checking for live stock

This is SMT Schottky Diode 100V 20A 3-Pin TO-263AB manufactured by Vishay Siliconix. The manufacturer part number is VB20100S-E3/8W. The given dimensions of the product include 10.45 x 9.14 x 4.83mm. The product is available in surface mount configuration. Furthermore, its maximum continuous forward current constitutes 20a. It has a maximum operating temperature of +150 °c. Moreover, a bespoke product has 250a peak non-repetitive forward surge current. It features 900mv of maximum forward voltage drop. In addition, the height is 4.83mm. It has a typical 30ma peak reverse current . Furthermore, the product is 9.14mm wide. Its accurate length is 10.45mm. The package is a sort of to-263ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. It is designed with a schottky diode. The diode features a single configuration. It contains 3 pins. While having the peak reverse repetitive 100v.

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V20100S, VF20100S, VB20100S, VI20100S, High Voltage Trench MOS Barrier Schottky Rectifier(Technical Reference)

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