Category:
Power MOSFET
Dimensions:
2.92 x 1.3 x 0.93mm
Maximum Continuous Drain Current:
680 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
450 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
50 pF@ 10 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
17 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.93mm
Typical Turn-On Delay Time:
3 ns
Minimum Operating Temperature:
-55 °C