Category:
Power MOSFET
Dimensions:
5.1 x 6.25 x 1.05mm
Maximum Continuous Drain Current:
130 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8030 pF @ 40 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
156 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Typical Turn-On Delay Time:
50 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.8 mΩ
