Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
40 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
4350 pF @ -20
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
95 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.4 W
Maximum Gate Source Voltage:
±20 V
Height:
1.575mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
21 mΩ
