Category:
Power MOSFET
Dimensions:
10 x 9.25 x 4.4mm
Maximum Continuous Drain Current:
47 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2000 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
175 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
4.4mm
Typical Turn-On Delay Time:
50 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
40 mΩ
