Category:
Power MOSFET
Dimensions:
9.15 x 7.1 x 0.7mm
Maximum Continuous Drain Current:
200 A
Width:
7.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
1.5 mΩ
Package Type:
DirectFET L8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
200 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
12320 pF @ 25 V
Length:
9.15mm
Pin Count:
11
Typical Turn-Off Delay Time:
78 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.7mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
