Infineon IRFR3505PBF N-channel MOSFET, 71 A, 55 V HEXFET, 3-Pin DPAK

IRFR3505PBF Infineon  N-channel MOSFET, 71 A, 55 V HEXFET, 3-Pin DPAK
IRFR3505PBF
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
71 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
DPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
62 nC @ 10
Channel Type:
N
Typical Input Capacitance @ Vds:
2030 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
41S
Typical Turn-Off Delay Time:
43 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
6.22mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
10 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 71 A 55 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IRFR3505PBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 2.39 x 6.22mm. While 71 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The package is a sort of dpak. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 62 nc @ 10. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2030 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. The forward transconductance is 41s . Whereas, its typical turn-off delay time is about 43 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 140 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 6.22mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 10 mω maximum drain source resistance.

pdf icon
IRFR3505PbF, IRFU3505PbF, HEXFET Power MOSFET(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. We ship IRFR3505PBF Internationally to many countries around the world.
Yes. You can also search IRFR3505PBF on website for other similar products.
We accept all major payment methods for all products including ET13814516. Please check your shopping cart at the time of order.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13814516 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13814516.
You can order Infineon brand products with IRFR3505PBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IRFR3505PBF N-channel MOSFET, 71 A, 55 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFR3505PBF N-channel MOSFET, 71 A, 55 V HEXFET, 3-Pin DPAK.