Category:
Power MOSFET
Dimensions:
5 x 6 x 0.7mm
Maximum Continuous Drain Current:
50 A, 80 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
7.2 mΩ, 12 mΩ
Package Type:
Power 56
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V, 33 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1315 pF@ 15 V, 2020 pF@ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns, 27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
±20 V
Height:
0.7mm
Typical Turn-On Delay Time:
8.6 (Q1) ns, 11 (Q2) ns
Minimum Operating Temperature:
-55 °C
