Category:
Power MOSFET
Dimensions:
3.05 x 1.4 x 1mm
Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
60 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.7V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.6 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
544 pF@ 10 V
Length:
3.05mm
Pin Count:
3
Typical Turn-Off Delay Time:
16.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
±12 V
Height:
1mm
Typical Turn-On Delay Time:
4 ns
Minimum Operating Temperature:
-55 °C
