Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
7.1 A, 7.4 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
3V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC @ 10 V, 31.6 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
472 pF@ 15 V, 1678 pF@ -15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns, 44 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
±20 (N-Channel) V, ±20 (P-Channel) V
Height:
1.5mm
Typical Turn-On Delay Time:
2.5 (N) ns, 3.5 (P) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
41 mΩ, 45 mΩ
