Infineon BSC150N03LD G Dual N-channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON

BSC150N03LD-G Infineon BSC150N03LD G Dual N-channel MOSFET, 20 A, 30 V OptiMOS 3, 8-Pin TDSON
BSC150N03LD G
Infineon

Product Information

Dimensions:
5.15 x 5.9 x 1mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TDSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
850 pF @ 15 V
Length:
5.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
26 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
2.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
22 mΩ
RoHs Compliant
Checking for live stock

This is Dual N-channel MOSFET 20 A 30 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC150N03LD G. The given dimensions of the product include 5.15 x 5.9 x 1mm. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.9mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of tdson. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 850 pf @ 15 v . Its accurate length is 5.15mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 12 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 26 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1mm. In addition, it has a typical 2.7 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 22 mω maximum drain source resistance.

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MOSFET Dual N-ch 30V 20A OptiMOS3 TDSON8(Technical Reference)

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