Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current:
260 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6320 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
290 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.4 mΩ
