Category:
Power MOSFET
Dimensions:
6.6 x 6.2 x 2.4mm
Maximum Continuous Drain Current:
5 A
Width:
6.2mm
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
800 mΩ
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
350 pF @ 25 V
Length:
6.6mm
Pin Count:
3
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
STripFET
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-65 °C
