Dimensions:
1.7 x 1.3 x 0.6mm
Maximum Continuous Drain Current:
170 mA, 330 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
50 V, 60 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SOT-666
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.26 nC @ 5 V, 0.5 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
24 pF@ -25 V, 33 pF@ 10 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
12 ns, 48 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Maximum Gate Source Voltage:
±20 V
Height:
0.6mm
Typical Turn-On Delay Time:
5 (N) ns, 13 (P) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω, 13.5 Ω
