Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
3 A, 3.7 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8 nC @ 10 V, 10 nC @ 10 V
Channel Type:
N, P
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
21 ns, 23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.13 W
Maximum Gate Source Voltage:
±20 V
Height:
1.55mm
Typical Turn-On Delay Time:
8 (P) ns, 12 (N) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
53 mΩ, 80 mΩ
