Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
5.8 A, 8.2 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.8 nC @ 5 V, 11.6 nC @ 5 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
24 ns, 31 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W, 1.25 W
Maximum Gate Source Voltage:
±20 V
Height:
1.55mm
Typical Turn-On Delay Time:
11 (Q1) ns, 13 (Q2) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ, 22.5 mΩ
