Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
4.9 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
±12 V
Height:
1.55mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
50 mΩ
