Infineon AUIRFR2307Z N-channel MOSFET, 53 A, 75 V HEXFET, 3-Pin DPAK

AUIRFR2307Z Infineon  N-channel MOSFET, 53 A, 75 V HEXFET, 3-Pin DPAK
AUIRFR2307Z
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
53 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
50 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2190 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
44 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
16 mΩ
RoHs Compliant
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This is N-channel MOSFET 53 A 75 V HEXFET 3-Pin DPAK manufactured by Infineon. The manufacturer part number is AUIRFR2307Z. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.39mm. While 53 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 50 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2190 pf@ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 44 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 110 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.39mm. In addition, it has a typical 16 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 16 mω maximum drain source resistance.

pdf icon
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET Datasheet(Technical Reference)

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You will get a confirmation email regarding your order of Infineon AUIRFR2307Z N-channel MOSFET, 53 A, 75 V HEXFET, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon AUIRFR2307Z N-channel MOSFET, 53 A, 75 V HEXFET, 3-Pin DPAK.
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