Category:
Power MOSFET
Dimensions:
2.92 x 1.3 x 0.93mm
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.8 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
79 pF@ 25 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
10 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.36 W
Maximum Gate Source Voltage:
±20 V
Height:
0.93mm
Typical Turn-On Delay Time:
2.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 Ω
