Category:
Power MOSFET
Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
70 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.5 nC @ 8 V
Channel Type:
N
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
5.6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Typical Turn-On Delay Time:
0.3 ns
Minimum Operating Temperature:
-55 °C
