onsemi MLD1N06CLT4G

MLD1N06CLT4G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
750mOhm @ 1A, 5V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Drain to Source Voltage (Vdss):
65 V
Vgs (Max):
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
40W
Mounting Type:
Surface Mount
Series:
SMARTDISCRETES™
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1A
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MLD1N
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is MLD1N06CLT4G. It is assigned with possible HTSUS value of 8541.29.0095. The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 750mohm @ 1a, 5v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 5v. The product has a 65 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w. The product is available in surface mount configuration. The product smartdiscretes™, is a highly preferred choice for users. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1a. This product use mosfet (metal oxide) technology. Moreover, it corresponds to mld1n, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 20/Dec/2013(PCN Obsolescence/ EOL)
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MLD1N06CL(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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Yes. We ship MLD1N06CLT4G Internationally to many countries around the world.