Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Gate Source Voltage:
30 V
Channel Type:
P
Width:
1.3mm
Length:
2.92mm
Maximum Drain Source Resistance:
125 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Height:
0.93mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MMBFJ1
Detailed Description:
JFET P-Channel 30V 225mW Surface Mount SOT-23-3
Voltage - Breakdown (V(BR)GSS):
30V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
7mA @ 15V
Package / Case:
TO-236-3, SC-59, SOT-23-3
Resistance - RDS(On):
125 Ohms
Voltage - Cutoff (VGS off) @ Id:
3V @ 10nA
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Power - Max:
225mW
Manufacturer:
ON Semiconductor
