Maximum Drain Source Voltage:
30 V
Configuration:
Single
Dimensions:
1.08 x 0.68 x 0.41mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
100 mW
Idss Drain-Source Cut-off Current:
1.2 → 3mA
Source Gate On-Capacitance:
4pF
Height:
0.41mm
Width:
0.68mm
Length:
1.08mm
Package Type:
SOT-883
Maximum Drain Gate Voltage:
-30V
Drain Gate On-Capacitance:
4pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
TF412
Detailed Description:
JFET N-Channel 30V 10mA 100mW Surface Mount SOT-883 (XDFN3) (1x0.6)
Input Capacitance (Ciss) (Max) @ Vds:
4pF @ 10V
Voltage - Breakdown (V(BR)GSS):
30V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
1.2mA @ 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
3-XFDFN
Supplier Device Package:
SOT-883 (XDFN3) (1x0.6)
Voltage - Cutoff (VGS off) @ Id:
180mV @ 1µA
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
100mW
Current Drain (Id) - Max:
10mA
Manufacturer:
ON Semiconductor
