Maximum Drain Source Voltage:
15 V
Configuration:
Single
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Idss Drain-Source Cut-off Current:
-7 → -60mA
Source Gate On-Capacitance:
11 pF @ -10 V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
125 Ω
Package Type:
SOT-23
Maximum Drain Gate Voltage:
-25V
Minimum Operating Temperature:
-55 °C
Drain Gate On-Capacitance:
11 pF @ 0 V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
43 Weeks
Base Part Number:
MMBFJ175
Detailed Description:
JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS):
30V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
7mA @ 15V
Package / Case:
TO-236-3, SC-59, SOT-23-3
Resistance - RDS(On):
125 Ohms
Voltage - Cutoff (VGS off) @ Id:
3V @ 10nA
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Power - Max:
225mW
Manufacturer:
ON Semiconductor
