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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT40QR21(STA1,E,D. The maximum collector current includes 40 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.7v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. It has a trr (reverse recovery time) of 600 ns. In addition, it is reach unaffected. Provide switching energy up to -, 290µj (off). Test condition included 280v, 40a, 10ohm, 20v. The toshiba semiconductor and storage's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3p(n) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 230 w. Moreover, it corresponds to gt40qr21, a base product number of the product. The product is designated with the ear99 code number.
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