Toshiba Semiconductor and Storage GT30N135SRA,S1E

GT30N135SRA-S1E Toshiba Semiconductor and Storage GT30N135SRA,S1E
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
60 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Switching Energy:
-, 1.3mJ (off)
Vce(on) (Max) @ Vge, Ic:
2.6V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max):
1350 V
Td (on/off) @ 25°C:
-
Operating Temperature:
175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
270 nC
REACH Status:
REACH Unaffected
Test Condition:
300V, 60A, 39Ohm, 15V
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
24 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
120 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Power - Max:
348 W
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT30N135SRA,S1E. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to -, 1.3mj (off). Features 2.6v @ 15v, 60a. The maximum collector emitter breakdown voltage of the product is 1350 v. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 270 nc gate charge. In addition, it is reach unaffected. Test condition included 300v, 60a, 39ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247 is the supplier device package value. The maximum power of the product is 348 w. The product is designated with the ear99 code number.

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