Fairchild Semiconductor SGL50N60RUFDTU
Product Information
Current - Collector (Ic) (Max):
80 A
HTSUS:
0000.00.0000
Switching Energy:
1.68mJ (on), 1.03mJ (off)
Vce(on) (Max) @ Vge, Ic:
2.8V @ 15V, 50A
Td (on/off) @ 25°C:
26ns/66ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
Gate Charge:
145 nC
Voltage - Collector Emitter Breakdown (Max):
600 V
Reverse Recovery Time (trr):
100 ns
Test Condition:
300V, 50A, 5.9Ohm, 15V
Package:
Bulk
IGBT Type:
-
Current - Collector Pulsed (Icm):
150 A
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HPM F2
Power - Max:
250 W
Base Product Number:
SGL50N60
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Yes. Our products in Transistors - IGBTs - Single category are shipped in lowest possible time.
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Yes. We ship SGL50N60RUFDTU Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is SGL50N60RUFDTU. The maximum collector current includes 80 a. It is assigned with possible HTSUS value of 0000.00.0000. Provide switching energy up to 1.68mj (on), 1.03mj (off). Features 2.8v @ 15v, 50a. Td (on/off) value of 26ns/66ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-264-3, to-264aa. Features 145 nc gate charge. The maximum collector emitter breakdown voltage of the product is 600 v. It has a trr (reverse recovery time) of 100 ns. Test condition included 300v, 50a, 5.9ohm, 15v. It is shipped in bulk package . With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. hpm f2 is the supplier device package value. The maximum power of the product is 250 w. Moreover, it corresponds to sgl50n60, a base product number of the product.
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