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This is manufactured by onsemi. The manufacturer part number is NGTB50N65S1WG. The maximum collector current includes 140 a. It is assigned with possible HTSUS value of 8541.29.0095. Features 2.45v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 75ns/128ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 128 nc gate charge. It has a trr (reverse recovery time) of 70 ns. In addition, it is reach unaffected. Provide switching energy up to 1.25mj (on), 530µj (off). Test condition included 400v, 50a, 10ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is 1 (unlimited). Features an IGBT trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 300 w. Moreover, it corresponds to ngtb50, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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